Active matrix display device with electrode between adjacent pixels

ABSTRACT

The active matrix display device has a thin film transistor and a pixel electrode, which is provided with a pixel voltage through the thin film transistor, for each of pixels. A supplemental pixel electrode, which is connected to the pixel electrode of one of the pixels adjacent to each other, and which extends to the region between the two pixels adjacent to each other, is also disposed. The supplemental pixel electrode enables the region between the pixels to be used as a part of the display region. The liquid crystal of this region is also driven by the voltage same as the pixel electrode. The configuration of the peripheral circuit of the pixel portion is simplified, reducing the framing area of the panel.

BACKGROUND OF INVENTION

1. Field of the Invention

This invention relates to an active matrix display device, specificallyto an active matrix display device with an improved display quality.

2. Description of the Related Art

A flat panel display device including a reflection type active matrixliquid crystal display device (referred to as LCD hereinafter) can bethin, small and light, and it operates with low-power consumption. TheLCD has been used as a display part in various devices such as mobileinformation device. The LCD, whose pixel has a switching element and athin film transistor, is known as an active matrix type. The panel ofthe active matrix display device is highly reliable for maintainingdisplayed contents of the pixels, which provides the active matrixdisplay device with high display quality.

FIG. 7 shows an equivalent circuit of a pixel in the active matrix LCD.Each pixel has a thin film transistor (TFT) 11 connected to a gate lineand a data line. When the TFT is turned on by a selection signaloutputted to the gate line, the data corresponding to the displaycontent is supplied to a liquid crystal capacitance 12 (Clc) from thedata line through the TFT. It is necessary to accurately keep thedisplay data from the time when the TFT is first selected for writing tothe time when the TFT is selected again in the next sequence. Therefore,a storage capacitance 13 (Csc) is connected to the TFT in series withthe liquid crystal capacitance Clc.

FIG. 8 is a plan view showing the configuration of the pixel portion ona TFT forming substrate (a first substrate 100 in FIG. 9) of theconventional LCD. FIG. 9 is a cross-sectional view of the LCDconfiguration along with the X—X cross sectional line in FIG. 8. The LCDhas a first substrate and a second substrate with the liquid crystalbetween them. In the active matrix LCD, the TFTs 11 and pixel electrodes74 are arranged in a matrix configuration on the first substrate 100. Acommon electrode 56, to which a common voltage Vcom is supplied, and acolor filter 54 are disposed on the second substrate 500, which isdisposed facing to the first substrate 100. The voltage applied betweenthe pixel electrode 74 and the common electrode 56, which are facingeach other with the liquid crystal between them, drives the liquidcrystal capacitance Clc.

The TFT disposed for each of the pixels on the first substrate 100 sideis a top-gate type TFT, whose gate electrode is located above an activelayer 64, as seen from FIG. 9. The active layer 64 of the TFT ispatterned on the substrate 100 as shown in FIG. 8. A gate insulatinglayer 66 is disposed covering over the active layer 64, and the gateline, which also functions as a gate electrode, is disposed on the gateinsulating layer 66. The part of the active layer 64 facing against thegate electrode is a channel region. A drain region 64 d and a sourceregion 64 s with an impurity doped are formed at the corresponding sidesof the channel region.

The drain region 64 d of the active layer 64 is connected to the dataline, which functions also as a drain electrode 70, through a contacthole formed in an interlayer insulating layer 68 covering the gateelectrode.

Also, a flattening insulating layer 72 is disposed covering the dataline and the drain line 70. The source region 64 s of the active layer64 is connected to pixel electrode 74 made of ITO (Indium Tin Oxide) onthe flattening insulating layer 72 through a contact hole.

The source region 64 s of the active layer 64 functions also as a firstelectrode 80 of the storage capacitance Csc disposed for each of thepixels and extends further, as shown in FIG. 8, from the contact regionof the pixel electrode 74. A second electrode 84 of the storagecapacitance element Csc is formed simultaneously with and in the samelayer as the gate electrode as seen from FIG. 9, but it is formed in aregion away from the gate electrode, keeping a certain distance betweenthem. The gate insulating layer 66 also works as a dielectric betweenthe first electrode 80 and the second electrode 84. The second electrode84 of the storage capacitance element Csc, are not independentlydisposed for each of the pixel as seen from FIG. 8. But it is disposedin the pixel region along the row direction of the matrix in the samemanner as the gate line 60. A predetermined storage capacitance voltageVsc is applied to the second electrode 84.

The storage capacitance element Csc disposed for each of the pixelsmaintains the electric charge corresponding to the display contents,which should be applied to the liquid crystal Clc, when the TFT is notselected. Therefore, the voltage change of the pixel electrode 74 can bemaintained, enabling the display contents to be kept unchanged duringone sequence.

The gate line 60 and the second electrode 84 (a storage capacitanceline) for forming the storage capacitance element Csc are disposed inparallel. The location of these two lines with respect to the locationof the pixel electrode 74 is shown in FIG. 10. The gate line 60 and thesecond electrode 84 (a storage capacitance line) are disposed in thelayer under the pixel electrodes 74, adjacent to each other. Theportions of the lines between the pixels shown as shaded areas in thefigure are not covered by either of the pixel electrodes 74.

The liquid crystal corresponding to the portions of the lines shown asshaded areas occasionally shows white light. This is often observed whenthe adjacent pixels appear as black elements. When white light isobserved, the display quality is deteriorated.

The gate line 60 and the second-electrode 84 (the storage capacitanceline) are usually made of reflecting material such as aluminum,molybdenum and chrome, which reflect light. Therefore, because the pixelelectrodes 74, which control the reflection of the light, do not existat the upper layer of the lines (shaded in the figure) in theconventional device, the alignment of the liquid crystal correspondingto this portion can not be controlled. This leads to a frequent whitelight observation. Although this problem can be solved by disposing ablack matrix (BM), the aperture ratio would be reduced.

Therefore, this invention is directed to prevent the abovementionedproblem and to offer the active matrix display device of high qualitydisplay.

SUMMARY OF THE INVENTION

The active matrix display device of this invention has a thin filmtransistor and a pixel electrode, which is provided with a pixel voltagethrough the thin film transistor, for each of pixels. A supplementalpixel electrode, which is connected to one of two pixel electrodesadjacent to each other, and which extends to the region between the twopixels adjacent to each other, is also disposed.

With the supplemental pixel electrode of above configuration, the regionbetween the pixels can be utilized as a part of display region. In thisconfiguration, the same voltage as that of the pixel electrode can drivethe liquid crystal in this region. Therefore, even when a black matrixis not used to provider a larger aperture ratio, this region will notshow white light when the pixel displays black, leading to high displayquality.

It is also possible to place a floating electrode, which configures acapacity coupling at the both pixel electrodes of the pixels adjacent toeach other through an insulating layer. In this configuration, thevoltage of the floating electrode changes in accordance with the voltagechange of the pixel electrode. Since the liquid crystal in the adjacentregion in the liquid crystal display device can be driven by the similarvoltage to the voltage of the pixel region, this region will not showwhite light when the pixel displays black, solving the abovementionedproblem.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a display pixel in an active matrix LCD of afirst embodiment of this invention.

FIG. 2 is a cross-sectional view of the LCD of FIG. 1 cut along the X—Xcross-sectional line shown in FIG. 1.

FIG. 3 is a cross-sectional view of a display pixel in an active matrixLCD of a second embodiment of this invention.

FIG. 4 is a plan view of a display pixel in an active matrix LCD of athird embodiment of this invention.

FIG. 5 is a cross-sectional view of the LCD of FIG. 4 cut along the X—Xcross-sectional line shown in FIG. 4.

FIG. 6 is a cross-sectional view of a display pixel in an active matrixLCD of a forth embodiment of this invention.

FIG. 7 shows an equivalent circuit of a pixel of a conventional activematrix LCD.

FIG. 8 is a plan view of the pixel portion on a TFT forming substrate ofthe conventional LCD.

FIG. 9 is a cross-sectional view of the LCD of FIG. 8 cut along the X—Xcross-sectional line shown in FIG. 8.

FIG. 10 schematically shows the location of the pixel electrode 74 withrespect to the location of the second electrode 84 of the LCD device ofFIG. 8.

DETAILED DESCRIPTION OF THE INVENTION

The embodiment of this invention will be explained in detail byreferring to FIGS. 1–6. A LCD is used as an example to describe theinvention.

FIG. 1 is a plan view of a display pixel in an active matrix LCD of afirst embodiment of this invention. FIG. 2 is a cross-sectional view ofthe LCD cut along the X—X cross-sectional line shown in FIG. 1. The samereference numerals will be given to the same components as in FIGS. 9and 10, and the explanation on those components will be omitted.

The LCD has a first substrate 100 and a second substrate 500 made oftransparent insulating material such as glass, and a liquid crystal 200placed between the two substrates.

An equivalent circuit of each of pixels is shown in FIG. 7. Pixelelectrodes 24 are disposed in a matrix configuration on the firstsubstrate 100 as seen from FIG. 1. A top gate type TFT 1 is placed foreach of the pixel electrodes.

An active layer 14 of the TFT 1 in each of the pixel is in a U-shape andintersects, at two points, a gate line 20, which extends straight in arow direction. At the portion where the active layer and the gate lineintersect each other, the active layer 14 makes a channel region 14 c,and the gate line 20 becomes the gate. A gate insulating layer 66 isformed between the gate and the channel region 14 c. A drain 14 d of theactive layer 14 is connected to a data line 22 extending in a columndirection through a contact hole made in an interlayer insulating layer68 and the gate insulating layer 66.

And a source 14 s of the active layer 14 is connected to a supplementalpixel electrode 40 through a contact hole C1 made in the interlayerinsulating layer 68 and the gate insulating layer 66. The supplementalpixel electrode 40 is disposed in the same layer (for example, analuminum layer) as the data line 22 on the interlayer insulating layer68 and extends over the region between the pixels adjacent to each otherin the row direction. That is, the supplemental pixel electrode 40extends to cover the area between the pixel electrodes 24, of the pixeladjacent to each other. Additionally, the supplemental pixel electrode40 is connected to the pixel electrode 24 (a reflecting electrode) onthe upper layer through a contact hole C2 made in a flatteninginsulating layer 72.

Also, a storage capacitance line 84 is configured in the same layer (forexample, molybdenum film, chrome film) as the gate line 20, and extendsin a row direction. The storage capacitance line 84 is overlapped with apart of the active layer 14 through the gate insulating layer 66. Thisoverlapped part forms a storage capacitance element.

According to this embodiment, the supplemental pixel electrode 40enables the area between the pixels to be utilized as a part of thedisplay region. Since the same voltage applied to the pixel electrode 24through the top gate type TFT 1 also drives the liquid crystal in thearea between the pixels, this area will not show white light, thusimproving the display quality.

FIG. 3 is a cross-sectional view of a display pixel in an active matrixLCD of a second embodiment of this invention. This figure shows a crosssection of the device corresponding to the cross section of FIG. 2. Theplanar configuration of the device of this embodiment is substantiallythe same as that of FIG. 2 except the cut in the insulating layer 72 asdescribed below.

In the first embodiment mentioned above, there is the thick flatteninginsulating layer 72 on the supplemental pixel electrode 40 extendingover the area between the pixel electrodes 24, adjacent to each other.And the liquid crystal 200 is placed on the flattening insulating layer72. However, when the insulating layer is placed between the electrodeand the liquid crystal, an electric charge is accumulated in this part,resulting in burning of the liquid crystal.

Therefore, the thick flattening insulating layer 72 on the supplementalpixel electrode 40 is removed, as seen from FIG. 3, in this embodiment.For example, etching can be performed to expose the supplemental pixelelectrode 40 by using the pixel electrodes 24, as masks. This preventsthe burning of the liquid crystal and improves the display quality.

FIG. 4 is a plan view of a display pixel in an active matrix LCD of athird embodiment of this invention. FIG. 5 is a cross-sectional view ofthe LCD cut along the X—X cross-sectional line shown in FIG. 4. Again,the same reference numerals are used to indicate the same components.The explanation on these components will be omitted.

In this embodiment, the portion of the supplemental pixel electrode 40extending over the area between the adjacent pixels of FIG. 1 is cut offfrom the remaining portion of the supplemental electrode 40. Thus, thecut-off portion becomes a floating electrode 41 of this embodiment andforms a capacity coupling with each of the pixel electrodes 24, 24 ofthe adjacent pixels through the flattening insulating layer 72.

The voltage of the supplemental pixel electrode 40 is the same voltageas the pixel electrode 24 in the first embodiment, as the supplementalpixel electrode 40 is connected to the pixel electrode 24 of one of thepixels. However, since the floating electrode 41 is electricallyfloating, the voltage is determined by the voltage of the pixelelectrode 24, with which the floating electrode 40 forms the capacitycoupling. That is, the voltage is determined based on the capacitance ofthe pixel electrode 24 and the floating electrode 41, and the capacitycoupling of these two electrodes.

Therefore, when both of the adjacent pixels appear black, the voltagecorresponding to that of these two pixel electrodes 24, (the voltagecorresponding to black display) is applied to the floating electrode 41,resulting in substantially similar black representation at the areabetween the adjacent pixels. On the other hand, when one of the adjacentpixels appears black and the other pixel appears white, a voltagebetween the black display and the white display is applied to thefloating electrode 41, resulting in a gray representation. In thismanner, the voltage of the floating electrodes 41 changes along with thevoltage change of the pixel electrodes 24. The alignment of the liquidcrystal 200 on the floating electrode 41 is also determined by thevoltage change of the pixel electrodes 24, eliminating the conventionalproblems of the conventional device.

The floating electrode 41 of this embodiment is configured by cuttingoff a portion of the supplemental pixel electrode 40 of the firstembodiment. The floating electrode 41 can also be configured by using adifferent layer.

In FIG. 5, the floating electrode 41 equally overlaps the pixelelectrodes 24, located at the both sides. However, it is possible tomake the induced voltage of the floating electrode 41 be controlledsubstantially by the voltage of one of the pixel electrodes by disposingthe floating electrode 41 substantially toward that pixel electrode tooverlap more with that pixel electrode than the other electrode. Thisconfiguration is suitable for displaying letters and drawing, whichrequires clear-cut boundary.

FIG. 6 is a cross-sectional view of a display pixel in an active matrixLCD of a forth embodiment of this invention. This figure shows a crosssection of the device corresponding to the cross section of FIG. 4. Theplanar configuration of the device of this embodiment is substantiallythe same as that of FIG. 4 except the cut in the insulating layer 72 asdescribed below.

The thick flattening insulating layer 72 on the floating electrode 41 ofthe third embodiment is removed in this embodiment. The etching isperformed to expose the floating electrode 41 by using, for example, thepixel electrodes 24, as masks. This prevents the burning of the liquidcrystal 200 and improves the display quality, for the same reason as thesecond embodiment.

The supplemental pixel electrode, which is connected to the pixelelectrode of one of the adjacent pixels and which extends to the areabetween the adjacent pixels, is disposed in the active matrix LCD ofthis invention, enabling the area between the pixels to be used as apart of the display area. In this configuration, since the voltage sameas the pixels electrode also drives the area between the pixels, thisarea does not show white light when the pixel displays black, leading tothe improved display quality.

Also, the floating electrode, which forms a capacity coupling at theboth pixel electrodes of the pixels adjacent to each other through theinsulating layer, is disposed. The voltage of the floating electrodechanges in accordance with the voltage change of the pixel electrode.Since the voltage similar to that of the pixel region also drives theliquid crystal in the area between the pixels of the LCD, the regionwill not show white light when the pixel displays black.

1. An active matrix display device comprising: a plurality of pixels; athin film transistor provided for each of the pixels; a pixel electrodeprovided for each of the pixels; and a supplemental pixel electrodeprovided for each of the pixels and connected to a corresponding pixelelectrode, wherein the supplemental pixel electrode extends to andcovers a region between the corresponding pixel and a pixel that is nextto said corresponding pixel, a part of the supplemental pixel electrodeis disposed under the corresponding pixel electrode with an insulatinglayer disposed between the supplemental pixel electrode and thecorresponding pixel electrode, and a portion of the insulating layerdisposed on the supplemental pixel electrode is removed to create anopening that is disposed between the corresponding pixel and the pixelthat is next to the corresponding pixel.
 2. An active matrix displaydevice comprising: a plurality of pixels; a thin film transistorprovided for each of the pixels; a pixel electrode provided for each ofthe pixels; a floating electrode disposed to cover a region between twoadjacent pixels and forming a capacitive coupling with each of the pixelelectrodes of the two adjacent pixels; and an insulating layer disposedbetween the floating electrode and the two corresponding pixelelectrodes, wherein the floating electrode is disposed partially underthe corresponding pixel electrodes and a portion of the insulating layerdisposed on the floating electrode is removed.